Nanoelectronics Part I (joint With ICN+T 2013)
Monday, September 9, 2013
NST - Nanoscience and Technology
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NST-2
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2:00 PM
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6:00 PM
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Nanoelectronics Part I (joint With ICN+T 2013)
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Room 351
NST - Nanoscience and Technology
2:00 PM
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NST-2-Or-1
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Charge Transport in Azobenze-Based Single-Molecule Junctions
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A.
Aran
Garcia-Lekue
2:15 PM
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NST-2-Or-2
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Simulation of synaptic plasticity depending on inorganic/organic interface effects in PEDOT:PSS based memory devices
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F.
Fei
Zeng
2:30 PM
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NST-2-In-1
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Local investigation of ballistic transport in semiconductor nanostructures
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K.
Klaus
ENSSLIN
3:00 PM
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NST-2-Or-3
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Electrical characterization of free-standing GaAs nanowires by multitip STM
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M.
Matthias
Steidl
3:15 PM
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NST-2-Or-4
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Atomic scale study of the first stage of silicide nanocrystals formation on Si(100) for nanoscale molecular contacts
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M.
Mayssa
YENGUI
3:30 PM
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NST-2-Or-5
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Conductive Atomic Force Microscope Measurements on Large Single Crystals of Conjugated Polymers
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W.
Wael
Hourani
3:45 PM
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NST-2-Or-6
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Oscillations of the band gap of single-walled carbon nanotubes depending on their length and diameter
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A.
Alexander
Ganin
4:00 PM
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NST-2-Or-6a
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Optoelectronic switching and negative differential resistance of molecular self-assembled monolayer junctions
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D.
Dechun
BA
4:15 PM
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NST-2-In-2
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Friction, Brownian motion, and energy dissipation mechanisms in adsorbed molecules and molecularly thin films: Heating, Electrostatic and Magnetic Effects*
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