Nanoelectronics Part I (joint With ICN+T 2013)

Monday, September 9, 2013
NST - Nanoscience and Technology NST-2 2:00 PM > 6:00 PM Nanoelectronics Part I (joint With ICN+T 2013) Room 351 NST - Nanoscience and Technology

2:00 PM NST-2-Or-1 Charge Transport in Azobenze-Based Single-Molecule Junctions > A. Aran Garcia-Lekue 2:15 PM NST-2-Or-2 Simulation of synaptic plasticity depending on inorganic/organic interface effects in PEDOT:PSS based memory devices > F. Fei Zeng 2:30 PM NST-2-In-1 Local investigation of ballistic transport in semiconductor nanostructures > K. Klaus ENSSLIN 3:00 PM NST-2-Or-3 Electrical characterization of free-standing GaAs nanowires by multitip STM > M. Matthias Steidl 3:15 PM NST-2-Or-4 Atomic scale study of the first stage of silicide nanocrystals formation on Si(100) for nanoscale molecular contacts > M. Mayssa YENGUI 3:30 PM NST-2-Or-5 Conductive Atomic Force Microscope Measurements on Large Single Crystals of Conjugated Polymers > W. Wael Hourani 3:45 PM NST-2-Or-6 Oscillations of the band gap of single-walled carbon nanotubes depending on their length and diameter > A. Alexander Ganin 4:00 PM NST-2-Or-6a Optoelectronic switching and negative differential resistance of molecular self-assembled monolayer junctions > D. Dechun BA 4:15 PM NST-2-In-2 Friction, Brownian motion, and energy dissipation mechanisms in adsorbed molecules and molecularly thin films: Heating, Electrostatic and Magnetic Effects*

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