Plasmas for Microelectronics and Nanotechnology (Joint with CIP 2013)

8:00 AM • PST-4-Or-1 • Multi-scale approach for simulation of deep silicon etching under SF6/C4F8 Bosch process > A. Amand PATEAU 8:15 AM • PST-4-Or-2 • Comparison of two hydro-carbonated based plasmas for HgCdTe etching > A. Arnaud PAGEAU 8:30 AM • PST-4-Or-3 • Dry deep etching of GaN wide-bandgap semiconductor > N. Nicolas GOSSET 8:45 AM • PST-4-Or-4 • Improvement of reproducibility in titanium deep etching > T. Thomas TILLOCHER 9:00 AM • PST-4-Or-5 • Electrode surface effect on methane RF dusty plasmas > J-F. Jean-François LAGRANGE 9:15 AM • PST-4-Or-6 • Non-invasive Process Diagnostics of Nanoparticle synthesis in an inductively coupled plasma reactor. > C. Christophe DELVAL 9:30 AM • PST-4-Or-7 • Deposition of GeTe phase change material by plasma enhanced MOCVD > M. Manuela Aoukar 9:45 AM • BK • BREAK 10:15 AM • PST-4-In-1 • Strategies for low-damage plasma etching of advanced k=2.0 porous organo-Silicon glass materials