Semiconductors and their Surfaces

Thursday, September 12, 2013
SS - Surface Science SS-15 4:00 PM > 6:00 PM Semiconductors and their Surfaces Room 342B SS - Surface Science

4:00 PM SS-15-Or-1 Relationship between Strain and Effective Mass in the Metallic Surface State of the √3×√3-Ag Structure on Si(111) epitaxial layer > Y. Yukichi SHIGETA 4:15 PM SS-15-Or-2 Discussion of the density functional theory methods applied for solving complex surface structures based on the example of c(8×2)/(4×2) InAs (001) > J. Jacek Kolodziej 4:30 PM SS-15-Or-3 Maximum aspect ratio of a coherent nanowire at equilibrium > G. Guillaume Boussinot 4:45 PM SS-15-Or-4 Unique surface structure formation on Ge covered Si(110) surface > Y. Yuta Yokoyama 5:00 PM SS-15-Or-5 First stages of 4H-SiC crystal growth: ab initio study > E. Elwira Wachowicz 5:15 PM SS-15-Or-6 Electrical conductance through surface states with large Rashba-type spin splitting > S. Shinichiro Hatta 5:30 PM SS-15-In-1 Novel development of very high brightness and highly spin-polarized electron gun with compact 3D spin manipulator for SPLEEM > T. Takanori Koshikawa

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