Plasma and process modeling - Part II
Tuesday, June 27, 2017
02. Plasma and process modeling
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S02.2
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4:40 PM
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6:20 PM
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Plasma and process modeling - Part II
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Thalie room
02. Plasma and process modeling
4:10 PM
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S02.2-1O061
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A complete simulation of deep Silicon etching using Bosch process
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G.
Guillaume
Le Dain
4:30 PM
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S02.2-2O081
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Lumped Circuit Model for Radio Frequency Magnetron Discharges
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D.
Dennis
Engel
4:50 PM
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S02.2-3O091
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A study of the oxygen dynamics in a reactive Ar/O2 high power impulse magnetron sputtering discharge using an ionization region model
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T.
Tiberiu
MINEA
5:10 PM
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S02.2-4O095
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Model based optimization of the film thickness homogeneity in sputter processes
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A.
Andreas
Pflug
5:30 PM
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S02.2-5O097
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2D PIC-MCC modeling of HiPIMS plasma including sputtered particles
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A.
Adrien
Revel
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